creat by art - thin single in-line low profile package ideal for compact required circuit - glass passivated junction - high surge current capability - halogen-free according to iec 61249-2-21 definition symbol unit v rrm v v rms v v dc v i f(av) a i 2 ta 2 s r jc o c/w r ja o c/w t j o c t stg o c document number: ds_d1402012 version: a14 420 non-repetitive peak forward surge current 8.3ms single sine-wave non-repetitive peak forward surge current 1ms single sine-wave a storage temperature range - 55 to +150 operating junction temperature range - 55 to +150 maximum reverse current @ rated vr t j =25 t j =125 i r TS6KL60 ts6kl80 ts6kl100 600 800 1000 note 1: pulse test with pw=300s, 1% duty cycle note 2: mount on heatsink size of 4" x 6" x 0.25" al-plate 2 i fsm 280 typical thermal resistance (note 2) 7 a v 5 150 560 700 600 maximum instantaneous forward voltage (note 1) if= 3a v f 1.05 rating of fusing ( t<8.3ms) 93 i fsm 150 maximum ratings and electrical characterstics (t j =25 unless otherwise noted) parameter maximum repetitive peak reverse voltage 800 1000 a maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 6 case: kbjl molding compound, ul flammability classification rating 94v-0 terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test polarity: as marked mounting torque: 0.5n.m is recommended weight: 2.6g (approximately) mechanical data kbjl TS6KL60 thru ts6kl100 taiwan semiconductor glass passivated sin g le-phase brid g e rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec free datasheet http://www.0pdf.com
part no. note 1: "xx" defines voltage from 600v (TS6KL60) to 1000v (ts6kl100) part no. ts6kl80 (ta=25 unless otherwise noted) document number: ds_d1402012 version: a14 ratings and characteristics curves ts6klxx (note 1) TS6KL60 thru ts6kl100 taiwan semiconductor packing code preferred p/n packing code ordering information kbjl 25 / tube package packing description example d3 ts6kl80 d3 d3 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload with heatsink 0 50 100 150 200 110100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 instantaneous forward current (a) forward voltage (v) fig. 3- typical forward characteristics pulse width-300 s 1% duty cycle t j =25 t j =125 0.01 0.1 1 10 100 0 20406080100 instantaneous reverse current (ua) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics t j =25 t j =125 free datasheet http://www.0pdf.com
min max min max a 24.70 25.30 0.972 0.996 b 10.00 10.60 0.394 0.417 c 1.20 1.60 0.047 0.063 d 0.90 1.10 0.035 0.043 e 2.10 2.30 0.083 0.091 f 7.30 7.70 0.287 0.303 g 5.50 5.90 0.217 0.232 h 14.40 15.40 0.567 0.606 i 24.90 25.50 0.980 1.004 j 4.00 4.40 0.157 0.173 k 3.00 3.40 0.118 0.134 m 6.90 7.30 0.272 0.287 n 2.50 2.90 0.098 0.114 o 0.30 0.70 0.012 0.028 p/n = specific device code yww = date code f = factory code document number: ds_d1402012 version: a14 marking diagram TS6KL60 thru ts6kl100 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 0 40 80 120 160 1 10 100 capacitance (pf) reverse voltage (v) fig. 5- typical junction capacitance f=1.0mhz vsig=50mvp-p f f f + ~ ~ d o a b j k h e g i m n c free datasheet http://www.0pdf.com
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